THz Emitters and Detectors Based on Ion Implanted III-V Semiconductors

Ultrafast charge carrier dynamics in semiconducting materials ultimately determine the performance of photoconductive terahertz (THz) emitters and receivers. Ion implantation of III-V semiconductors allows carrier dynamics to be tailored for a particular application, and thus the technique is increasingly being applied to the development of advanced materials for terahertz photonics. In this talk I will briefly introduce the technique of ion implantation and review some recent applications in THz photonics. 1 will then present time resolved conductivity studies of GaAs:As
⁺
, InGaAs:Fe
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, InP:O
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and InP:Fe
⁺
and relate these results to improved terahertz emitter and detector performance.