The Effects of Processing on EEPROM Reliability

EEPROMs have one significant advantage over the more common EPROM. This is in the ease with which data can be changed in just a matter of milliseconds. In this paper we will investigate the effects that the various critical process steps can have on the two key reliability aspects of these memories, namely: Data Retention and Write/Erase endurance. In particular we will examine effects of the tunnel oxidation conditions and protective overcoat type on these parameters.