Interface Films in the Si-Al System

Carbon-like interface films exert both a metallurigical and electrical effect on Semiconductor products. Test devices without contamination have uniform silicon to aluminum diffusion, Rc approximately 3 × 10-7 ohms cm2, and Vbe(sat) = 0. 84 v. Similar devices with massive interface films have restricted silicon to aluminum diffusion, Rc greater than 10-6 devices recover during operation.