Performance Evaluation of SiC MOSFET/BJT/Schottky Diode in A 1MHz Single Phase PFC

SiC power devices have very promising future because their ultra low conduction and switching losses and ability of working at high temperatures. SiC MOSFET not only has very low switching loss but also shows no degradation in Rdson at 150°C. In order to achieve ultra low switching loss for SiC BJT, a new drive method is proposed and implemented. These characteristics make SiC power MOSFET/BJT devices attractive for high frequency single phase PFC applications. In this paper, a 1MHz all SiC PFC is designed and evaluated. Experimental results are presented in this paper. These results are also compared with silicon CoolMOS.