Deep traps induced by 700keV protons in CdTe and CdZnTe Detectors

We have studied the effects of 700 keV proton at increasing fluences (up to times 10
¹²
p/cm
²
) on CdTe:Cl and Cd
_0.9
Zn
_0.1
Te detectors. The charge transport properties of the detectors have been studied by mutau product measurements, gamma spectroscopy and PICTS analyses. The correlation of the macroscopic transport behaviour with the information on the microscopic defective states allowed for the identification of the role played by the dominant traps: levels Z and HI resulted related to electron trapping effects, while levels K and X showed a hole trapping character.