Development of New 3d Si Detectors at BNL and CNM

New 3d Si detector structures have been proposed by BNL at the end of 2005. Different from the traditional planar Si detector technology, 3d detector technology places p
⁺
and n
⁺
electrodes vertically through the entire detector thickness, thus involves 3-dimensional processing. Our new 3d structures have a number of new feature either in configuration and/or in processing: 1) electrodes are etched not all the way through the detector thickness to ensure a simple, true one-sided processing; 2) single electrode columns (p
⁺
or n
⁺
) are etched and doped, with the other type of columns (n
⁺
or p
⁺
) planar implanted; and 3) stripixel electrode configuration can be arranged to get 2d position sensitive strip-like detectors with single-sided processing. The processing of the first prototype detectors batch of the new 3d detectors with single column (n
⁺
column on p-type substrate) has begun. n
⁺
columns have been etched by CNM of Barcelona, and BNL has just finished the remaining planar processing. Electrical test results on the test stripixel structures as well as on the stripixel detectors are good. Processing and device simulations have been made on these new 3d Si detectors.