Trapping of Electrons and Holes in p-type Silicon Irradiated with Neutrons

Trapping times of drifting electrons and holes were measured in high resistivity standard, oxygenated and magnetic Czochralski p-type materials with charge correction method. Diodes were irradiated with neutrons up to equivalent fluence Phi = 3 times 10
¹⁴
cm
^-2
. Trapping times were parameterized as 1/tau = betaPhi. Average beta was measured to be beta
_e
= 4.2 times 10
^-16
cm
²
ns
^-1
for electrons and beta
_h
= 4.3 times 10
^-16
cm
²
ns
^-1
for holes.