Expression of Concern: Modeling of 3.1-10.6 GHz CMOS Filter-Based Low Noise Amplifier for Ultra-Wideband Receivers

In this paper, we present a complete modeling methodology for fully integrated lter-based ultrawideband low noise ampli ers (LNA). Our accurate analytical models capture the impact of device and passive component parasitics and transistor short channel effects to closely match circuit simulation results. Utilizing our method, we are able to accurately generate an ultrawideband LNA in the 3.1 to 10.6 GHz band that achieves a power gain greater than 10dB, input and output impedance matching less than -10dB, and a noise gure from 2.2dB to 3.3dB when using a TSMC 0.18μm mixed-signal/RF model. These performance parameters exceed the results reported from previous ultra-wideband designs. Our modeling methodology provides a new means for accurate modeling and efficient design of high performance ultrawideband amplifiers in wireless front-end RF systems.