RF Power Measurements of InAlN/GaN Unstrained HEMTs on SiC Substrates at 10 GHz

Unstrained high-electron mobility transistors (HEMTs) were fabricated from InAlN/GaN on semi-insulating SiC substrates. The devices had 0.24-mum T-gates with a total width of 2times150 mum. Final passivated performance values for these devices are I
_max
=1279 mA/mm, I
_DSS
=1182 mA/mm, R
_c
=0.43 Omegamiddotmm, rho
_s
=315 Omega/sq, f
_T
=45 GHz, f
_max(MAG)
=64 GHz, and g
_m
=268 mS/mm. Continuous-wave power measurements at 10 GHz produced P
_sat
=3.8 W/mm, G
_t
=8.6 dB, and PAE=30% at V
_DS
=20 V at 25% I
_DSS
. To our knowledge, these are the first power measurements reported at 10 GHz for this material