Excellent uniformity and reproducible resistance switching characteristics of doped binary metal oxides for non-volatile resistance memory applications

We have investigated various doped metal oxides such as copper doped molybdenum oxide, copper doped Al
₂
O
₃
, copper doped ZrO
₂
, aluminium doped ZnO, and Cu
_x
O for novel resistance memory applications. Compared with non-stoichiometric oxides (Nb
₂
O
_5-x
, ZrO
_x
, SrTiO
_x
), doped metal oxides show higher device yield. Moreover, Cu:MoO
_x
have demonstrated excellent memory characteristics such as reliability under programming cycles, potential multi-bit operation, good data retention, highly scalable property, and fast switching speed. The switching mechanism of the copper doped molybdenum oxide can be explained by the generation and rupture of multi-filaments under the electrical stress