A Cost-Effective Low Power Platform for the 45-nm Technology Node

This paper presents a cost-effective 45-nm technology platform, primarily designed to serve the wireless multimedia and consumer electronics needs. This platform features low power transistors operating at a nominal voltage of 1.1V, an ultra low k dielectric (k~2.5) with up to 9 Cu metal layers and 0.25/0.3/0.37μm
²
SRAM cells. This platform also features an optional third gate oxide for either higher speed or active power mitigation. This technology has been developed on the (100)-oriented substrate with a key focus on process simplicity. Transistor improvement relies on mask-free strain engineering techniques along with co-implanted halos and laser anneal. The impact of laser anneal on transistor reliability and mixed-signal capabilities are also examined. Drive current as high as 660/320μA/μm at 1nA/μm and 1.1V are reported.