Analysis of Dopant Diffusion and Defect Evolution during sub-millisecond Non-melt Laser Annealing based on an Atomistic Kinetic Monte Carlo Approach

Sub-millisecond (ms) non-melt laser annealing (NLA) is investigated through experiments and atomistic KMC modeling. NLA can improve the dopant activation dramatically and achieve shallow junctions. B diffusivity during sub-ms annealing is discussed for the first time. The KMC model with F
_n
V
_m
complexes indicates that the thermal budget of sub-ms annealing is too small for full defect evolution and one possible solution for defect stabilization is F co-implant