0.13 μm Low Voltage Logic Based RF CMOS Technology with 115GHz fT and 80GHz fMAX

Superior RF CMOS of 115GHz f
_T
and 80GHz f
_max
has been realized by 0.13 μm low voltage logic based RF CMOS technology by aggressive device scaling and optimized layout. NF
_min
of 2.2dB at 10GHz is achieved even without deep N-well and ground-shielded signal pad. P
_1dB
of near 10dBm can fit bluetooth requirement and 55% PAE at 2.4 GHz address the good potential of sub-100nm CMOS for low voltage RF power applications