A 1.8 GHz Fully Integrated Low Voltage LC VCO in Silicon on Sapphire CMOS

This paper presents the design, fabrication and measurement of a low voltage VCO operating at 1.8 GHz and fabricated in 0.5μm Silicon On Sapphire CMOS (SOS-CMOS) process. The VCO operates with supply voltage as low as 1V. The tuning range was measured to be 14% and the measured phase noise was -117.5 dBc/ Hz at an offset frequency of 1 MHz from the 1.77 GHz carrier. The VCO and the buffers consume 14.7 mW power from a 1.5V supply.