Analytical, Scaleable Large Signal Noise Model for GaAs and InP MMIC Applications

In this paper an analytical large signal noise model for GaAs-and InP-based HFETs is presented. The capability of the model is verified by the comparison of measured and simulated bias dependence of the high frequency noise behaviour of various III/V-devices. Furthermore, the model extraction procedure and the implementation into a commercial microwave design system is shown. The use for MMIC applications is demonstrated by the comparison of measured and simulated noise properties of a single stage optoelectronic receiver for 10 GHz.