A high-speed resonance-type FET transceiver switch for millimeter-wave band wireless network

This paper concerns with the design consideration, fabrication process, and performance of a CPW monolithic AlGaAs/InGaAs HJFET switch for V-band wireless networks applications. The Switch utilizes a resonance concept in order to either pass, or to block a signal by presenting, respectively, a parallel, or a series resonant circuit to the signal. A developed T/R switch exhibits state-of the art switching-speed and isolation of 250psec and 41dB, respectively, and an insertion loss of 3.9dB ovr V-band frequencies.