Theoretical and Experimental Investigation of Millimeter-Wave InP Gunn-Effect Oscillator

A large-signal computer simulation of an InP millimeter-wave Gunn-effect oscillator has been developed. The results of simulation show that increasing active region doping level leads to substantial growth of efficiency. The maximal simulated efficiency for uniformly doped structure was found to be 7.5% at 110 GHz, 4.4% at 160 GHz, 2.1% at 200 GHz. The technology was also developed witch allow to make active structures with small (about 10 μm) diameter. The experimental oscillators efficiency was 2% at 110 GHz (fundamental mode) and 0.7% at 150 GHz (second harmonic) for 1.1 μm uniformly doped structure.