Large Signal Behaviour of Cathode Notch Stabilized T.E. Amplifier Devices

An account of a computer model is presented which is designed to simulate the large signal behaviour of GaAs transferred electron amplifier diodes. Devices have been fabricated with a variety of doping profiles following the indications of the results of the simulation. Experimental results are reported concerning the small signal impedance, noise figure, large signal impedance, maximum added power and efficiency of a number of devices of different doping profiles. Indication is given of the large signal stability, the bandwidth of the negative resistance and the third order intermodulation product measured in these devices. The results, both of the computer simulation and measurements, suggest that more efficient amplifier diodes can be produced by using a shallow notch structure and that this configuration is not optimum for lowest noise factor.