Piece-wise modelling - bringing the essentials of MOSFET modelling to a new student generation

A simple MOSFET model is presented in this paper. The model focuses on simple concepts that stresses dualities (or opposites) like ON or OFF, linear or saturated operation, strong inversion or subthreshold leakage, etc. The model treats velocity saturation as a first-order effect and leads naturally to industry standard BSIM models, but still retains a close resemblance to classical '"square-law" models. Despite its simplicity the model shows a good fit to experimental data (in this case exemplified by Intel 60 nm trigate transistor data)