High Performance, Low Complexity Vertical PNP BJT Optimization for a 0.24 μm SiGe BiCMOS Technology

An isolated vertical PNP BJT with f
_T
of 28 GHz and f
_MAX
of 26 GHz available as a modular component in a 0.24 μm SiGe BiCMOS technology is described. This paper presents, to the authors' knowledge, the highest f
_T
ever published for a homojunction PNP device, as well as for a modular PNP in a BiCMOS technology. The VPNP device is fabricated using a low complexity integration scheme and is optimized to complement the high breakdown SiGe NPN HBT