An Improved On-chip 4-Port Parasitics De-embedding Method with Application to RF CMOS

This paper presents an improved algorithm to solve the general 4-port parasitics de-embedding problem. Experimental results on 0.13 mum RF CMOS device are presented. For the device examined, gate resistance extracted from open-short results is 40% lower than that extracted from 4-port results. The reciprocity and symmetry of the 4-port parasitics are also examined