An 8-mW, ESD-protected, CMOS LNA for Ultra-Wideband Applications

A common-gate, 7.9mW, ESD-protected, CMOS ultra-wideband LNA is presented. A wideband transconductance enhancement scheme facilitates the inclusion of ESD protection at the circuit input and reduces noise figure. Measurement results indicate that the LNA achieves a high S
₂₁
(15dB) over the entire band, and a 4.25kV HBM ESD protection level is projected from the measured failure current. Simulation results show low NF (3-4dB) across the band and an input-referred 1dB CP of -11.2dBm at 5GHz