Selectively Doped High-Power AlGaN/InGaN/GaN MOS-DHFET

We describe a novel AlGaN/InGaN/GaN metal-oxide-semiconductor double heterostructure field-effect transistor with peak drain current of 1.67 A/mm and 2-GHz RF power of 15 W/mm at a drain bias as low as 35 V. These high values of peak currents and high RF powers at relatively low drain bias resulted from an additional selective area doping of the access regions during the device fabrication. The RF-output power of 12.5 W/mm (at a drain bias of V
_D
=30 V) was stable within a 0.5-dB variations during a 100-h continuous-wave stress test