X-band AlGaN/GaN HEMT with over 80W Output Power

AlGaN/GaN high electron mobility transistors (HEMTs) were developed for X-band applications. The operating voltage and temperature dependence of output power characteristics in CW operating conditions were investigated. The developed AlGaN/GaN HEMT with combined two dies of 11.52 mm gate periphery exhibits output power of over 81.3W with a power added efficiency (PAE) of 34% under V
_DS
=30V, CW operating condition at 9.5GHz, and a gain compression level of 3dB