SiC Schottky Diode for Use in Power Convertors

The specification characteristics of power electronic applications can be improved by use of the recent high-speed power devices. The Schottky structure has been developed for direct type converter circuits. The description of real layout and testing methodology of an experimental sample of 4H-SiC Schottky barrier diode manufactured by diffusion welding has been given. Presented results of timing for reverse recovery time are described according to the sample of the direct current regulator