Compact Modeling of GaAs Heterojunction Bipolar Transistors using the new Mextram 3500 model

We adapt the Mextram 504 compact model for Si and SiGe bipolar transistors to make it suitable for compact modeling of GaAs HBT's. We discuss the different physics included in the new model, Mextram 3500, and demonstrate the capabilities of the new model on GaAs HBT characteristic simulations. We also show an example of advanced GaAs PA-circuit simulations that have been performed with our model