High Performances 3D Damascene MIM Capacitors Integrated in Copper Back-End Technologies

RF and analog designs require high performances MIM capacitors. In order to continue downscaling of MIM devices, we have developed and integrated a 3D damascene MIM capacitor in the copper back-end of a 0.13 mum BICMOS technology. Si
₃
N
₄
has been used as dielectric to reach excellent performances for a 5 fF/mum
²
capacitance density in term of leakage current, voltage linearity, dielectric relaxation, and reliability. This 3D architecture is a very promising candidate to carry on capacitance density increase.