Characterization and Modeling of Intermodulation Linearity in a 200 GHz SiGe HBT Technology

This paper presents experimental characterization and modeling of intermodulation linearity in a 200 GHz SiGe HBT technology. The impact of biasing current, voltage, and breakdown voltage is examined. IP3 is simulated using the VBIC, HICUM and Mextram model to evaluate the linearity capability of these models. The impact of avalanche and self-heating on IIP3 are examined. A weak avalanche is shown to have significant impact on IIP3