Turn-On Voltage Control in BSCR and LDMOS-SCR by the Local Blocking Junction Connection

The problem of local ESD protection of power arrays is addressed at the device level. A wide voltage range of the pulsed dV/dt turn-on is achieved using a local blocking junction connection. The approach is experimentally validated on both examples of bipolar SCR and NLDMOS-SCR devices and implemented in a 0.5mum 24V BiCMOS process