Schottky Tunneling Source MOSFET Design for Mixed Mode and Analog Applications

A novel asymmetric Schottky tunneling source MOSFET is proposed in this paper. The main feature of this device is the concept of gate controlled Schottky barrier tunneling at the source. The STS MOSFET was fabricated using conventional processes combined with present NiSi technology. The device shows excellent short channel immunity, compared to conventional SOI MOSFETs. This improves the scalability of the device as also makes it an attractive candidate for analog operations