Computer Modeling of Shottky Diodes Low-Frequency Noise at Direct Current Bias and in a Mode of Detecting VHF Carrier

Schottky diode LF noise may be sufficiently different at direct bias and in VHF detection mode. Results of LF noise diode computer modeling carried out by means of AWR LtMicrowave OfficeGt using standard SPICE Schottky diode model is not adequate to experimental data in these modes. Advanced Schottky diode noise model including serial resistance fluctuations, noise models of central and boundary areas was simulated using AWR LtMicrowave OfficeGt. The results of this modeling sufficiently better corresponds to experimental data as at direct bias so at VHF detection mode