Microscopic simulation of semiconductor lasers in the GaInNAs material system

(GaIn)(NAs) lasers of different material compositions are considered with respect to their gain properties and radiative and Auger losses. Scattering and dephasing processes are included on a microscopic basis. The theory shows good agreement to experiment. Optical properties for a 1.55 mum structure are investigated and show no principal degradation as compared to a 1.3 mum structure