Radiation Hardened 128K PDSOI CMOS Static RAM

A fast 128K-bit asynchronous SRAM with access time of 25 ns is presented. It used a radiation hardened 0.8-micron CMOS/SOI process with 3 layers of metal. It features 500 muA stand-by current, 20mA@10MHz operating current, 500K rad(Si) total dose tolerant and 2.45times10
¹¹
rad (Si)/s dose rate survivability. The circuit operates with ambient temperature from -25 to +125degC and power supply from 4.5 to 5.5V. A 28-pin dual-in-line flat pack package is used