Analytical Model for Surface Electrical Field of Double RESURF LDMOS with Field Plate

An analytical model for surface electrical field distribution along the drift region of double RESURF LDMOS with the gate and the drain field plates is presented, which takes the influence of non-uniformly doping concentration into account. Based on the 2D Poisson equation, the model provides an closed solution of electrical field distribution including the off-state and the on-state under different bias. The analytical results are verified by the semiconductor device simulator MEDICI and are analyzed based on optimization devices