A Novel Multi-Channel Phase-Change Memory Cell for Multi-State Storage with High Controllability

Lateral single-channel (SC) and multi-channel (MC) phase-change memory (PCM) cell structures are numerically analyzed for multi-state storage based on their temperature distributions and their programming characteristics. As studied by finite element modeling (FEM), shorter pulses lead to more gradual transition from the set to the reset state of these cells. Especially, for the MC-PCM cell with channels having different lengths, channels are sequentially melted with increasing pulse amplitude. Corresponding step-like programming characteristics of the cell indicate high performance for its application of multi-state storage