A dielectric-bridge-type MEMS series contact switch for 0-10GHz applications

A dielectric-bridge-type MEMS series contact switch is designed, fabricated and tested. This structure allows electrically insulating the control circuit from the RF signal path, and avoids the possible crosstalk. SiON is used as the function dielectric material for its low intrinsic stress. Both the upper gold electrodes and the contact metallic bar are on the rear side surface of the SiON dielectric bridge membrane. The fabrication process is relatively simple and the switch can be easily realized in common CMOS process with minimum modification. The measured results show the pull-in voltage is 23.3V and the isolation is better than -53dB at 0-10GHz