Gate-leakage model of Ge MOS capacitor with high-k gate dielectric

Gate-leakage model of n-Ge MOS capacitor with stacked high-k gate dielectric in inversion region is developed based on energy-band analysis and WKB approximation for hole tunneling. The validity of the model is checked for MOSFET with stacked high-K/interlayer gate dielectric, and simulated results exhibit good agreement with experimental data, indicating the applicability of the model for designing small-sized Ge MOS devices with stacked high-k gate dielectric