The PDSOI accumulation-mode dynamic threshold pMOS with reversed Schottky barrier

For the first time, partially-depleted silicon-on-insulator (PDSOI) accumulation-mode dynamic threshold (AMDT) pMOS with TiSi
₂
/n-Si as reverse Schottky barrier (RSB) is reported. By this RSB scheme, AMDT pMOS can be operated beyond 0.7 V, which is the drawback of conventional DT pMOS with gate and body connected (GBC). Compared with normal AM pMOS, AMDT pMOS with RSB reduces threshold voltage by 360 mV and shows excellent subthreshold slope, higher drivability and improved off-state breakdown characteristics