Improved MOSFET characteristics by Incorporating Laminated Dysprosium (Dy2O3) Dielectric into HfO2 Gate Stack

New structural approach of Dy2O3 incorporated HfO2 multi-metal oxide n-MOSFETs and their electrical characterization are investigated for the first time. Top Dy2O3 laminated HfO2 bi-layer structure shows the thinnest EOT with reduced leakage current compared to control HfO2. Improved electrical characteristics such as lower VT, higher drive current and channel electron mobility are demonstrated. In addition, better VT instabilities, reduced dielectric charge trapping, and less Ta penetration from TaN metal gate electrode are obtained in Dy2O3/HfO2 structure. Finally, reduced phonon scattering is found to be the plausible mechanism for higher channel mobility.