SPICE Model of SiC JFETs for Circuit Simulations

This paper presents SPICE model for one kind of high voltage transistors-1200 V, 5A SiC JFET. Temperature dependent characterization of the device has been done up to 200 degC. Switching behavior has also been studied at 600 V, 5 A level. Based on both static and dynamic characterizations, this paper focuses on SPICE modeling work of such a device for circuit simulations. The model parameters have been extracted from experimental plots. Simulations are then used to verify the developed compact model. Reasonably good agreement has been obtained between the model and experimental results