The effect of interface states on amorphous-silicon transistors

The properties of the interface where silicon nitride is deposited on top of a-Si:H have been investigated using two types of thin-film transistor (TFT) structure: a top-gate TFT with nitride gate dielectric and a bottom-gate TFT with a nitride passivation layer. TFT characteristics depend strongly on the nitride properties and the thickness of the a-Si:H, particularly at thicknesses less than 3000 AA. Results are interpreted in terms of the effect of interface states.<
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