Silicon matrix disorder in amorphous hydrogenated silicon alloys

The authors report a detailed investigation of correlations between Urbach energies from photothermal deflection spectroscopy and Raman half-widths of transverse optic (TO)-like Si-Si modes as a measure of silicon matrix disorder in glow-discharge amorphous hydrogenated silicon (a-Si:H) and a-SiGe:H, as well as in glow-discharge and sputtered a-SiC:H and a-SiN:H. A corresponding decrease in TO full width at half-maximum (FWHM) and Urbach energy E/sub 0/ for soft deposition techniques yields bond angle distributions as narrow as 8.5 degrees for the best a-Si:H films. Even at the lowest levels of nitrogen incorporation, simultaneous increases in E/sub 0/ and TO-like half-widths indicate that lattice distortions occur due to threefold coordination of nitrogen in the a-Si:H matrix. In contrast, no deviation of silicon TO-FWHM could be detected in a-SiC:H of up to 35 at.% of carbon content, whereas Urbach edges broaden in a well-known manner that is interpreted in terms of -CH/sub 3/ incorporation into the amorphous network. Diborane doping and sputter deposition, however, give rise to lattice distortions in a-SiC:H, which reflects changes in the carbon coordination.<
>