Analysis of Si-body thickness variation for a new 40 nm gate length bFDSOI

In this work, a novel fully depleted silicon-on- insulator MOSFET with block oxide (bFDSOI) is proposed to investigate the influence of Si-body thickness on the characteristics of the device. Based on the two-dimensional (2-D) simulation results, the proposed structure exhibits better ultra-short-channel behavior such as reduced drain-induced barrier lowering (DIBL) and better subthreshold swing when compared with that of a conventional ultra-thin body (UTB) SOI structure. Furthermore, thanks to the presence of thick Si-body, the bFDSOI FET also shows reduced thermal effects that can help to improve the device reliability.