Technology-Based Static Figure of Merit for High Voltage ICs

This paper introduces for the first time a technology-based static figure of merit (FOM) for lateral high voltage MOSFETs (LDMOSFETs). Established figures of merit in the power semiconductor arena take into account material properties only. Here we show that the static performance of lateral power devices is very significantly influenced by the power IC technologies. Hence we develop a technology FOM that couples the breakdown voltage with the specific on-state resistance. The FOM is based on numerical simulation results and verified with the reported experimental data from different JI and SOI technologies