Off - State Performances of Ideal Schottky Barrier Diodes (SBD) on Diamond and Silicon Carbide

Extensive numerical simulations have been carried out to compare the electrical performance of ideal Schottky diodes on diamond and silicon carbide. The influences of the drift layer parameters on the off-state behaviour of the diodes are presented for both punch-through (PT) and non punch-through (nPT) structures. In PT case breakdown voltage was shown to be constant with the drift doping at low concentrations. Analytical expressions of the breakdown voltage variation with doping for nPT diodes are also included