60 GHz Band RF MEMS Switch

This paper reports on design, simulation and manufacturing of a novel millimeter wave MEMS switch structure. The switching operation utilizes electrostatic force which was the only way for high reliability and wafer scale manufacturing techniques at high frequency. The switching element, a bridge type one, shows an actuation voltage of about 24.5V. Different geometries for the switching element were designed and manufactured. The switches exhibit low insertion losses (0.75dB@60GHz) with good isolation (>50dB@60GHz). The simulated and measured results were in a good agreement for the 60GHz frequency band