Optimization of Nanoscale Thyristors on SOI for High-Performance High-Density Memories

In this paper, methods for achieving a manufacturable TCCT on SOI with excellent thermal stability and fast switching speed are reported for the first time. A carrier lifetime adjustment process was implemented and indium was used as a p-type dopant. By using these methods, we demonstrate a TCCT device with stable forward breakover voltage (Vfb) at 125degC and bipolar gain with significantly improved temperature response. Finally, we achieved a worst-case switching speed of less than 2.1 ns measured from a 9Mb T-RAM test chip