Impact of FD-SOI on Deep-Sub-100-nm CMOS LSIs -A View of Memory Designers-

A planar double-gate FD-SOI is compared with the bulk CMOS in terms of low-voltage operations. It turns out that due to the small VT variation the FD-SOI is suitable for deep-sub-1 V operations with improved voltage margin of RAM cells and sense amplifiers, and reduced speed variations of logic gates