Post-RTA Effect on Electrical Characteristics of Nano-scale Strained Si Grown on SiGe-on-Insulator n-MOSFET

The effect of rapid thermal annealing (RTA) and post-RTA annealing (PRA) on the electrical characteristics of both strained Si and conventional SOI n-MOSFETs was investigated. The authors demonstrated that post-RTA heat treatment rather than typical RTA is inevitable to obtain enhanced DC characteristics in strained Si n-MOSFET. This is attributed to the suppression of channel surface roughness owing to post-RTA