On-wafer testing of a W-band HEMT image-rejection downconverter MMIC

This paper describes the first successful on-wafer conversion gain and noise figure measurements taken on a downconverter MMIC at W-band. On-wafer and in-fixture measured results are consistent for a 0.1 /spl mu/m AlGaAs-InGaAs-GaAs HEMT-based W-band image-rejection downconverter MMIC which has attained good RF yield. With an LO drive of 5 dBm at 94 GHz, the downconverter chip has achieved an USB conversion gain of 7.5-8.5 dB and noise figure of 6.5-7.5 dB for an IF signal in the range of 40 to 400 MHz.<
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